SK hynix Supplies HBM4E Samples, Memory Competition Heats Up

SK hynix has officially entered the race for memory market leadership by supplying 12-layer High Bandwidth Memory 4 Extended (HBM4E) samples to key customers. This move signals the beginning of an intense competition to secure dominance in the high-performance memory market. SK hynix announced on June 18th that it had delivered 12-layer HBM4E samples, designed for next-generation AI, to its clients.

This development comes approximately a month after Samsung Electronics announced its 'industry-first mass production shipment.' The HBM4E samples supplied by SK hynix achieve a data processing speed of up to 16Gbps, marking a more than 30% increase in speed compared to the previous generation (HBM4), and a roughly 20% improvement in energy efficiency. Furthermore, by utilizing 10nm-class 6th-generation (1c) DRAM and its proprietary Advanced MR-MUF packaging technology, SK hynix has achieved a 48GB capacity.

The competition for HBM market leadership is expected to expand from HBM4 to HBM4E. According to market research firm Counterpoint Research, SK hynix held a 58% share of the HBM market in the first quarter of this year, surpassing the combined share of Samsung Electronics and Micron.

Experts emphasize that the sample verification phase will be followed by customer evaluations, and the competitiveness in mass production will ultimately determine the direction of market leadership. Professor Lee Jong-hwan of Sangmyung University's Department of System Semiconductor Engineering explained that providing development samples itself is not difficult, but quality and mass production capability are crucial when customers decide on their supply ratios after receiving the samples.

SK hynix is adopting a strategy that leverages its partnerships with key customers, a strength carried over from the HBM3 era. This approach differentiates it from Samsung Electronics, which emphasizes technological leadership by proactively unveiling next-generation products.