Samsung's Advanced 4nm Process to Be Applied to HBM4 Base Die

Samsung Electronics will apply its advanced foundry process to the base die, a core component of next-generation high bandwidth memory (HBM). HBM is a memory semiconductor that integrates multiple DRAMs into a single package to process data rapidly, while the base die supports these DRAMs and connects them to the controller.

In an interview with Samsung Electronics' Semiconductor Newsroom on the 27th, Koo Jae-hoon, Executive Vice President and Head of the Technology Development Team at Samsung Electronics' Foundry Business, revealed that the company applied its 4nm 4th-generation foundry process—rather than a conventional memory process—to the base dies of HBM4 and HBM4E. He explained that this enabled an operating speed of 14Gbps or higher, while the optimization of the metal wiring structure also improved power consumption and thermal performance.

He emphasized the company's competitive edge, highlighting that an integrated solution encompassing memory, foundry, and packaging enables cross-departmental collaboration from the design phase, thereby reducing the mass production timeline and securing cost competitiveness.