SK Hynix to Invest 54 Trillion Won in Yongin and Cheongju... Securing Competitiveness in AI Semiconductors
SK Hynix will invest 54.3 trillion won to produce next-generation AI memory semiconductors. The board of directors passed a resolution to build new fabs in Yongin and Cheongju. This decision is part of the phased execution of the mid- to long-term investment strategy unveiled in June. It serves as a concrete implementation plan for the mega projects involving the Yongin Semiconductor Cluster and Cheongju production base currently being promoted by the government.
The 'Y2' fab at the Yongin Semiconductor Cluster will see an investment of 35.2 trillion won. Construction will begin next July, with the first cleanroom scheduled to operate in June 2029. It will serve as a production base for next-generation DRAM, including High Bandwidth Memory (HBM).
The 'M17' fab at the Cheongju Campus will see an investment of 19.1 trillion won. Construction will begin next February, with the first cleanroom scheduled to operate in December 2028. It will serve as a NAND production base for AI enterprise SSDs and similar applications.
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